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esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 1/15 fast ultra high-psrr, low-noise, 300ma cmos linear regulator general description the emp8734 features ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guarantees delivery of 300ma output current and supports preset output voltages ranging from 0.8v to 4.5v with 0.05v increment. based on its low quiescent current consumption and its less than 1 a shutdown mode of logical operation, the emp8734 is ideal for battery-powered applications. the high power supply rejection ratio of the emp8734 holds well for low input voltages typically encountered in battery-operated systems. the regulator is stable with small ceramic capacitive loads (1f typical). the emp8734 is available in miniature sot-23-5 sot-353(sc-70-5 ), sot-343 and tdfn-6 packages. features ? 300ma guaranteed output current ? 62db typical psrr at 1khz ? 110v rms output voltage noise (10hz to 100khz) ? 290mv typical dropout at 300ma ? 57a typical quiescent current ? less than 1 a typical shutdown mode ? fast line and load transient response ? 2.2v to 5.5v input range ? auto-discharge during chip disable ? 80s typical turn-on time ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances typical application * use 2.2 f for v out < 1.2v
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 2/15 connection diagram order information sot-23-5(top view) emp8734-xxvf05grr xx output voltage vf05 sot-23-5 package grr rohs & halogen free rating: -40 to 85c package in tape & reel tdfn-6(top view) emp8734-xxfe06nrr xx output voltage fe06 tdfn-6 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel sot-353 (sc-70-5) (top view) emp8734-xxvi05nrr xx output voltage vi05 sot-353 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel sot-343 (sc-82-4) (top view) emp8734-xxvj04nrr xx output voltage vj04 sot-343 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 3/15 pin functions name sot-23-5 tdfn-6 sot-353 function vin 1 1 1 supply voltage input . require a minimum input capacitor of close to 1f to ensure stability and sufficient decoupling from the ground pin. gnd 2 5 2 ground pin . en 3 6 3 enable input. enable the regulator by pulling the en pin high. to keep the regulator on during normal operation, connect the en pin to vin. the en pin must not exceed vin under all operating conditions. nc 4 2/4 4 no connection vout 5 3 5 output voltage feedback . order, mark & packing information marking vout product id packing 1.2 emp8734-12vf05grr 3k units tape & reel 1.5 emp8734-15vf05grr 3k units tape & reel 1.8 emp8734-18vf05grr 3k units tape & reel 2.5 emp8734-25vf05grr 3k units tape & reel 2.8 emp8734-28vf05grr 3k units tape & reel 3.0 emp8734-30vf05grr 3k units tape & reel 3.3 EMP8734-33VF05GRR 3k units tape & reel 2.5 emp8734-25fe06nrr 5k units tape & reel 1.2 emp8734-12vi05nrr 3k units tape & reel 1.3 emp8734-13vi05nrr 3k units tape & reel 1.8 emp8734-18vi05nrr 3k units tape & reel 2.5 emp8734-25vi05nrr 3k units tape & reel 3.3 emp8734-33vi05nrr 3k units tape & reel
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 4/15 marking vout product id packing 1.2 emp8734-12vj04nrr 1.8 emp8734-18vj04nrr 2.8 emp8734-28vj04nrr 3.3 emp8734-33vj04nrr 3k units tape & reel
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 5/15 absolute maximum ratings (notes 1, 2) vin, vout, ven -0.3v to 6.5v storage temperature range -65c to160c junction temperature (t j ) 150c lead temperature (10 sec.) 240c esd rating human body model 2kv mm 200v thermal resistance ( ja ) sot-23-5 250c/w sot-343/sot-353 (note 6) tdfn-6 (note 6) operating ratings (note 1, 2) temperature range -40c to 85c supply voltage 2.2v to 5.5v electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +1v (note 3), v en =v in , c in = c out = 2.2f, t a = 25c. boldface limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ max units v in input voltage 2.2 5.5 v v out output voltage 0.8 4.5 v -2 +2 v otl output voltage tolerance 1ma i out 300ma v out (nom) +1v vin 5.5v (note 3) -3 +3 % of v out (nom) i out maximum output current average dc current rating 300 ma i limit output current limit 300 450 ma i out = 0ma 57 supply current i out = 300ma 130 i q shutdown supply current v out = 0v, en = gnd 0.001 1 a i out = 100ma 90 v do dropout voltage (note4) i out = 300ma 290 mv line regulation i out = 1ma, (v out + 1v) v in 5.5v (note 3) -0.1 0.01 0.1 %/v v out load regulation 1ma i out 300ma 0.0008 %/ma e n output voltage noise v out =2.5v, i out = 10ma, 10hz f 100khz 110 v rms thermal shutdown temperature 165 t sd thermal shutdown hysteresis 35 v ih , (v out + 1v) v in 5.5v (note 3) 1.2 v en en input threshold v il , (v out + 1v) v in 5.5v (note 3) 0.4 v i en en input bias current en = gnd or vin 0.1 100 na t on turn-on time v out at 95% of final value 80 s t off turn-off time i out =0ma (note 5) 2.4 ms note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications do not apply when operating the device outside of its rated operating conditions.
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 6/15 note 2: all voltages are with respect to the potential at the ground pin. note 3: condition does not apply to input voltages below 2.2v since this is the minimum input operating voltage. note 4: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in -v out = 1v. dropout voltage does not apply to the regulator versions with v out less than 2.2v. note 5: turn-off time is time measured between the enable input just decreasing below v il and the output voltage just decreasing to 10% of its nominal value. note 6: maximum power dissipation for the device is ca lculated using the following equations: ja a t - j(max) t d p = where t j(max) is the maximum junction temperature, t a is the ambient temperature, and ja is the junction-to-ambient thermal resistance. e.g. for the sot-23-5 package ja = 250c/w, t j(max) = 150c and using t a = 25c, the maximum power dissipation is found to be 500mw. the derating factor (-1/ ja ) = -4mw/c, thus below 25c the power dissipation figure can be increase d by 4mw per degree, and similarity decreased by this factor for temperatures above 25c. the value of the ja for the tdfn-6 package is specifically dependent on the pcb trace area, trace material, and the number of layers and thermal vias. functional block diagram
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 7/15 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. psrr vs. frequency psrr (db) psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency frequency (hz) frequency (hz) frequency (hz) frequency (hz) dro p out volta g e vs. load current load current (ma) dropout voltage (mv) ground current ( a) ground current vs. load current load current (ma)
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 8/15 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. (continued) line transient ground current ( a) ground current vs. vin vin (v) load transient load transient v out =3.3v, no load vin (v), tr=tf=4us v out (10mv/div) v out =2.5v, i out =10ma 200 s/div 200 s/div 200 s/div 4.5 3.5 v out 20mv/div 50ma/div v out =2.5v 50mv/div 50ma/div i out =50ma~100ma v out v out =2.5v i out =10ma~100ma enable response 20 s/div enable response i out =0ma i out =0ma v en (1v/div) v out (1v/div) vin= 3 . 5 v , v out =2. 5 v , i out = 0 ma 20 s/div v en (1v/div) v out (1v/div) vin=3.5v , v out =2.5v , i out =300ma
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 9/15 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c. (continued) enable response 40 s/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out =0ma enable response 40 s/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out =300ma disable response 2ms/div v en (1v/div) v out (1v/div) vin= 3 . 5 v , v out =2. 5 v , i out = 0 ma disable response 2ms/div v en (1v/div) v out (0.5v/div) vin=2.2v , v out =1.2v , i out = 0 ma power derating (sot-25) power consumption (mw) surface temperature ( o c)
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 10/15 sot-23-5 o 2 symbpls min. nom. max. a 1.05 1.20 1.35 a1 0.05 0.10 0.15 a2 1.00 1.10 1.20 b 0.30 0.50 c 0.08 0.20 d 2.80 2.90 3.00 e 2.60 2.80 3.00 e1 1.50 1.60 1.70 e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.55 l1 0.60 ref l2 0.25 ref 0 5 10 2 6 8 10 unit: mm
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 11/15 tdfn-6 common dimensions millimeter dimensions inch symbol min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.027 0.029 0.031 a3 0.200 ref 0.008 ref b 0.25 0.30 0.35 0.010 0.012 0.014 d 2.00 bsc 0.079 bsc d2 1.20 1.30 1.40 0.046 0.050 0.054 e 2.00 bsc 0.079 bsc e2 0.50 0.60 0.70 0.022 0.024 0.026 e 0.650 bsc 0.026 bsc l 0.25 0.30 0.35 0.009 0.011 0.013
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 12/15 sot-353 (sc-70-5) symbpls min. nom. max. a 0.80 1.10 a1 0 0.10 a2 0.80 0.90 1.00 a3 0.47 0.52 0.57 a4 0.33 0.38 0.43 b 0.15 0.30 c 0.08 0.22 d 1.85 2.00 2.15 e 1.80 2.10 2.40 e1 1.10 1.25 1.40 e 0.65 bsc e1 1.30 bsc l 0.26 0.36 0.46 l1 0.42 ref l2 0.15 bsc 0 4 8 2 4 12 unit: mm d
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 13/15 sot-343 common dimensions millimeter dimensions inch symbol min. max. min. max. a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.250 0.400 0.010 0.016 b1 0.350 0.500 0.014 0.020 c 0.080 0.150 0.003 0.006 d 0.050 typ. 0.002 typ. d 2.000 2.200 0.079 0.087 e 2.150 2.450 0.085 0.096 e1 1.150 1.350 0.045 0.053 e 0.650 typ. 0.026 typ. e1 1.200 1.400 0.047 0.055 l 0.260 0.460 0.010 0.018 l1 0.525 typ. 0.021 typ. l2 0.250 typ. 0.010 typ.
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 14/15 revision history revision date description 2.0 2009.05.08 emp transferred from version 1.3 2.1 2009.06.23 1. delete fbp-6 & sot-343 package (page 2) 2. delete fbp-6 & sot-343 order information (page 3) 3. add order information sot-23-5 vout 1.2v 1.3v(page 3) 4. add sot-353 package type (page 2) 5. add order information sot-353 vout 1.2v~3.3v (page 3) 6. delete fbp-6 & sot-343 outline drawing (page 10~13) 7. add sot-353 outline drawing (page 10~13) 2.2 2010.01.13 1. delete/add some content in general description part (page 1) 2. delete sot-23-5 nrr package (page 2) 3. sc70-5 revised as sc-70-5 (page 2) 4. add sot-343 connection diagram & order information (page 2) 5. add order, mark & packing information of sot-343 (page 4) 6. sot-343/sot353 (page 5) 7. add outline drawing of sot-343 (page 13) 2.3 2011.03.18 add d marking for sot353 package in page12
esmt/emp emp8734 elite semiconductor memory technology inc./ elite micropower inc. publication date : mar. 2011 revision : 2.3 15/15 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without th e prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt as sumes no responsibility for any error in this document, and reserves th e right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of ou r products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other intelle ctual property rights of esmt or others. any semiconductor devices may have inherently a certain rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly aff ect human lives or cause physical injury or property damage. if prod ucts described here are to be used for such kinds of application, pu rchaser must do its own quality assurance testing appropriate to such applications.

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